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| AP40T03GI Pb Free Plating Product Advanced Power Electronics Corp. Low Gate Charge Single Drive Requirement Lower On-resistance RoHS Compliant G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 25m 28A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercialTO-220CFM isolation package is universally preferred for all commercial-industrial through hole applications. industrial surface mount applications and suited for low voltage GD S TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=100 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 30 25 28 18 95 25 0.2 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 5 62 Units /W /W Data and specifications subject to change without notice 201121051-1/4 AP40T03GI Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 30 1 - Typ. 0.02 16 9 2 6 7 56 16 5 610 160 117 1.5 Max. Units 25 45 3 1 25 100 15 980 2.3 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=18A VGS=4.5V, ID=14A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=150 C) o o VDS=VGS, ID=250uA VDS=10V, ID=18A VDS=30V, VGS=0V VDS=24V ,VGS=0V VGS= 25V ID=18A VDS=25V VGS=4.5V VDS=15V ID=18A RG=3.3,VGS=10V RD=0.83 VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=18A, VGS=0V IS=14A, VGS=20V dI/dt=100A/s Min. - Typ. 20 10 Max. Units 1.3 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. 2/4 AP40T03GI 100 80 T C =25 C 80 o T C =150 C 10V 7 .0V ID , Drain Current (A) o 10V 7 .0V ID , Drain Current (A) 60 60 40 5 .0V 40 5 .0V 4.5V 4.5V 20 20 V G =3.0V V G = 3 . 0V 0 0.0 2.0 4.0 6.0 0 0.0 2.0 4.0 6.0 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 60 2.0 I D =14A T A =25 C Normalized RDS(ON) 45 o 1.6 I D =18A V G =10V RDS(ON) (m ) 1.2 30 0.8 15 0.4 2 4 6 8 10 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.5 14 12 2.0 8 T j =150 o C T j =25 o C Normalized VGS(th) (V) 1.2 10 IS(A) 1.5 6 4 1.0 2 0 0 0.2 0.4 0.6 0.8 1 0.5 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C ) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP40T03GI f=1.0MHz 16 1000 I D =18A VGS , Gate to Source Voltage (V) C iss V DS =15V V DS =20V V DS =25V 12 8 C (pF) 4 C oss C rss 0 0 4 8 12 16 20 100 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS ,Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 1 Duty factor = 0.5 100 Normalized Thermal Response (Rthjc) 0.2 ID (A) 100us 10 0.1 0.1 1 T C =25 C Single Pulse 0 0.1 1 10 o 1ms 10ms 100ms 1s DC 0.05 PDM t 0.02 T Duty Factor = t/T Peak Tj = PDM x Rthjc + T C 0.01 Single Pulse 100 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 V DS ,Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 40 V DS =5V ID , Drain Current (A) 30 VG QG 4.5V QGS QGD T j =25 o C T j =150 o C 20 10 Charge 0 Q 0 2 4 6 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4/4 |
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